Effects on focused ion beam irradiation on MOS transistors SAND-96-2512C DE97 004206 CONF-9704281

Effects on focused ion beam irradiation on MOS transistors

SAND-96-2512C DE97 004206 CONF-9704281

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 規格・テクニカルリポート類
Title: Effects on focused ion beam irradiation on MOS transistors
Author/Editor: Campbell, A. N
Peterson, K. A
Fleetwood, D. M
Soden, J. M
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 11 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND-96-2512C
テクニカルリポート番号 : DE97 004206
テクニカルリポート番号 : CONF-9704281
Holding library: 国立国会図書館
Call No.: LS-DE97/004206
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005882578
http://id.ndl.go.jp/bib/000005882578
Bibliographic Record Category (NDL): 291