Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells SAND981603C DE98 007123

Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells

SAND981603C DE98 007123

Call No. (NDL): LS-DE98/007123
Bibliographic ID of National Diet Library: 000005896069

Material type: 規格・テクニカルリポート類

Author: Rohatgi, Aほか

Publisher: -

Publication date: 1998

Material Format: Microform

Capacity, size, etc.: 5 p. (1 microfiche)

NDC: -

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Material Type: 規格・テクニカルリポート類
Title: Effective passivation of the low resistivity silicon surface by a rapid thermal oxide/PECVD silicon nitride stack and its application to passivated rear and bifacial Si solar cells
Author/Editor: Rohatgi, A
Narasimha, S
Ruby, D. S
Publication Date: 1998
Publication Date (W3CDTF): 1998
Extent: 5 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND981603C
テクニカルリポート番号 : DE98 007123
Holding library: 国立国会図書館
Call No.: LS-DE98/007123
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005896069
http://id.ndl.go.jp/bib/000005896069
Bibliographic Record Category (NDL): 291