Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies SAND972634C DE98 004025

Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies

SAND972634C DE98 004025

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Material Type: 規格・テクニカルリポート類
Title: Wafer bonding of GaAs, InP, and Si annealed without hydrogen for advanced device technologies
Author/Editor: Roberds, B. E
Choquette, K. D
Geib, K. M
Kravitz, S. H
Twesten, R. D
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND972634C
テクニカルリポート番号 : DE98 004025
Holding library: 国立国会図書館
Call No.: LS-DE98/004025
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005896348
http://id.ndl.go.jp/bib/000005896348
Bibliographic Record Category (NDL): 291