Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices SAND980381C DE98 004964 CONF980705

Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices

SAND980381C DE98 004964 CONF980705

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Material Type: 規格・テクニカルリポート類
Title: Effects of irradiation and isochronal anneal temperature on hole and electron trapping in MOS devices
Author/Editor: Fleetwood, D. M
Winokur, P. S
Shaneyfelt, M. R
Riewe, L. C
Flament, O
Publication Date: 1998
Publication Date (W3CDTF): 1998
Extent: 7 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND980381C
テクニカルリポート番号 : DE98 004964
テクニカルリポート番号 : CONF980705
Holding library: 国立国会図書館
Call No.: LS-DE98/004964
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005897456
http://id.ndl.go.jp/bib/000005897456
Bibliographic Record Category (NDL): 291