In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon SAND980223C DE98 002588

In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon

SAND980223C DE98 002588

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Material Type: 規格・テクニカルリポート類
Title: In-situ monitoring of etch by-products during reactive ion beam etching of GaAs in chlorine/argon
Author/Editor: Lee, J. W
Pearton, S. J
Abernathy, C. R
Vawter, G. A
Shul, R. J
Publication Date: 1997
Publication Date (W3CDTF): 1997
Extent: 8 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : SAND980223C
テクニカルリポート番号 : DE98 002588
Holding library: 国立国会図書館
Call No.: LS-DE98/002588
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000005946061
http://id.ndl.go.jp/bib/000005946061
Bibliographic Record Category (NDL): 291