MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications. Final rept. 15 Sep 1995-15 Oct 1999 AD-A386790 ARO348361EL

MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications. Final rept. 15 Sep 1995-15 Oct 1999

AD-A386790 ARO348361EL

Call No. (NDL): LS-AD-A386790
Bibliographic ID of National Diet Library: 000006093904

Material type: 規格・テクニカルリポート類

Author: Schetzina, J. F

Publisher: -

Publication date: 2001

Material Format: Microform

Capacity, size, etc.: 25 p. (1 microfiche)

NDC: -

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Microform

Material Type: 規格・テクニカルリポート類
Title: MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications. Final rept. 15 Sep 1995-15 Oct 1999
Author/Editor: Schetzina, J. F
Publication Date: 2001
Publication Date (W3CDTF): 2001
Extent: 25 p. (1 microfiche)
Note (Material Type): [microform]
Report No.: テクニカルリポート番号 : AD-A386790
テクニカルリポート番号 : ARO348361EL
Holding library: 国立国会図書館
Call No.: LS-AD-A386790
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000006093904
http://id.ndl.go.jp/bib/000006093904
Bibliographic Record Category (NDL): 291