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Table of Contents
CONTENTS
Fundamentals, Materials & Education
Advanced Semiconductor Material & Process 1
OA4-1 Electrical Properties of Field Effect Transistor with (Bi, La) Ti3O12 Ferroelectric Gate Film on Y2O3/Si Substrate/ 1
OA4-2 Sol-gel Derived Nd-substituted Bi4Ti3O12 Thin Film and its Electrical Properties/ 7
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Bibliographic Record
You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.
- Material Type
- 図書
- ISBN (set)
- 4-88686-000-1 (set)
- Volume
- v. 1
- Author/Editor
- organized by the Institute of Electrical Engineers of Japan [et al.]
- Author Heading
- 電気学会 デンキ ガッカイ ( 00259505 )Authorities
- Publication, Distribution, etc.
- Publication Date
- [2004]
- Publication Date (W3CDTF)
- 2004
- Extent
- 910 p.