Studies on the boron diffusion in silicon using CVD-BN and its application to P-MOS integrated circuits

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Material Type: 博士論文
Title: Studies on the boron diffusion in silicon using CVD-BN and its application to P-MOS integrated circuits
Author/Editor: 平山誠 [著]
Author Heading: 平山, 誠ヒラヤマ, マコト
Extent: 冊
Alternative Title: CVD-BNを用いた珪素への硼素拡散とP-MOS集積回路への応用に関する研究 CVD-BN オモチイタケイソエノホウソカクサント P-MOS シュウセキカイロエノオウヨウニカンスルケンキュウ
Degree grantor/type: 上智大学
Date Granted: 昭和52年3月31日
Date Granted (W3CDTF): 1977
Dissertation Number: 甲第22号
Degree Type: 工学博士
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-52-F248
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000007742153
http://id.ndl.go.jp/bib/000007742153
Bibliographic Record Category (NDL): 213