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Physics and technology of high-k gate dielectrics 3. : 3rd international symposium on high dielectric constant gate stacks : symposium G2 ("atomic layer deposition applications") : Oct 2005, Los Angeles, CA. (ECS Transactions ; 1 (no. 5))

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Physics and technology of high-k gate dielectrics 3. : 3rd international symposium on high dielectric constant gate stacks : symposium G2 ("atomic layer deposition applications") : Oct 2005, Los Angeles, CA.

(ECS Transactions ; 1 (no. 5))

Call No. (NDL)
M17-07-18
Bibliographic ID of National Diet Library
000008386932
Material type
図書
Author
-
Publisher
Electrochemical Society
Publication date
c2006.
Material Format
Paper
Capacity, size, etc.
xi, 801 p. : ill. ; 24 cm.
NDC
-
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Note (General)：

Papers." (...) of The Electrochemical Society, and was held during its 208th Meeting." -- pref.

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Paper

Material Type
図書
ISBN
1566774446
Title
Physics and technology of high-k gate dielectrics 3. : 3rd international symposium on high dielectric constant gate stacks : symposium G2 ("atomic layer deposition applications") : Oct 2005, Los Angeles, CA.
Series Title
ECS Transactions ; 1 (no. 5)
Publication, Distribution, etc.
Pennington : Electrochemical Society
Publication Date
c2006.
Publication Date (W3CDTF)
2006
Extent
xi, 801 p. : ill. ; 24 cm.
Alternative Title
Dielectric and semiconductor materials, devices, and processing
Place of Publication (Country Code)
US