Design of three-dimensional structure MOSFETs with substrate bias control for low-power LSIs

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Material Type: 博士論文
Title: Design of three-dimensional structure MOSFETs with substrate bias control for low-power LSIs
Author/Editor: Toshiharu Nagumo [著]
Author Heading: 南雲, 俊治ナグモ, トシハル
Publication, Distribution, etc.: [Toshiharu Nagumo]
Publication Date: [2006]
Publication Date (W3CDTF): 2006
Extent: 1冊
Alternative Title: 低電力LSIに向けた基板バイアス制御三次元構造MOSFETの設計テイデンリョク LSI ニムケタキバンバイアスセイギョサンジゲンコウゾウ MOSFET ノセッケイ
Degree grantor/type: 東京大学
Date Granted: 平成18年3月23日
Date Granted (W3CDTF): 2006
Dissertation Number: 甲第21169号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2007-A598
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000008479452
http://id.ndl.go.jp/bib/000008479452
Bibliographic Record Category (NDL): 213