Synthesis and characterization of HfN-based metal gate electrodes by MOCVD for the application of advanced high-κ MOS stacks

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Material Type: 博士論文
Title: Synthesis and characterization of HfN-based metal gate electrodes by MOCVD for the application of advanced high-κ MOS stacks
Author/Editor: 王文武 [著]
Author Heading: 王, 文武オウ, ブンブ
Publication, Distribution, etc.: [王文武]
Publication Date: [2006]
Publication Date (W3CDTF): 2006
Extent: 1冊
Alternative Title: MOCVD法を用いたHigh-κ MOSスタック用HfN系金属電極の合成と評価 MOCVDホウオモチイタ High - カッパ MOS スタックヨウ HfNケイキンゾクデンキョクノゴウセイトヒョウカ
Degree grantor/type: 東京大学
Date Granted: 平成18年3月23日
Date Granted (W3CDTF): 2006
Dissertation Number: 甲第21202号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
Alias of Author: Wang, Wenwu
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2007-A631
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000008479512
http://id.ndl.go.jp/bib/000008479512
Bibliographic Record Category (NDL): 213