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Physics and technology of high-k gate dielectrics 4. : 4th international symposium on high dielectric constant gate stacks : symposium E3 ("atomic layer deposition applications 2") : Oct 2006, Cancun, Mexico. (ECS Transactions ; 3 (no. 3))

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Physics and technology of high-k gate dielectrics 4. : 4th international symposium on high dielectric constant gate stacks : symposium E3 ("atomic layer deposition applications 2") : Oct 2006, Cancun, Mexico.

(ECS Transactions ; 3 (no. 3))

Call No. (NDL)
M17-07-973
Bibliographic ID of National Diet Library
000008532969
Material type
図書
Author
-
Publisher
Electrochemical Society
Publication date
c2006.
Material Format
Paper
Capacity, size, etc.
xiv, 547 p. : ill. ; 23 cm.
NDC
-
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Papers." (...) of The Electrochemical Society, and will be held during its 210th Meeting" -- pref.

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Paper

Material Type
図書
ISBN
1566775035
Title
Physics and technology of high-k gate dielectrics 4. : 4th international symposium on high dielectric constant gate stacks : symposium E3 ("atomic layer deposition applications 2") : Oct 2006, Cancun, Mexico.
Series Title
ECS Transactions ; 3 (no. 3)
Publication, Distribution, etc.
Pennington : Electrochemical Society
Publication Date
c2006.
Publication Date (W3CDTF)
2006
Extent
xiv, 547 p. : ill. ; 23 cm.
Alternative Title
Dielectric and semiconductor materials, devices, and processing
Place of Publication (Country Code)
US