Study on integrated ferroelectric gate field-effect transistor memory with an intermediate electrode

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Material Type: 博士論文
Title: Study on integrated ferroelectric gate field-effect transistor memory with an intermediate electrode
Author/Editor: Bui Nguyen Quoc Trinh [著]
Author Heading: Bui Nguyen Quoc Trinh ブイウェンクゥオクチィン
Publication, Distribution, etc.: [Bui Nguyen Quoc Trinh]
Publication Date: [2007]
Publication Date (W3CDTF): 2007
Extent: 2冊 (副論文・参考論文とも)
Alternative Title: 中間電極を用いた強誘電体ゲート電界効果トランジスタメモリの集積化に関する研究チュウカンデンキョクオモチイタキョウユウデンタイゲートデンカイコウカトランジスタメモリノシュウセキカニカンスルケンキュウ
Degree grantor/type: 北陸先端科学技術大学院大学
Date Granted: 平成19年9月21日
Date Granted (W3CDTF): 2007
Dissertation Number: 甲第495号
Degree Type: 博士 (材料科学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2009-F764
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000010438978
http://id.ndl.go.jp/bib/000010438978
Bibliographic Record Category (NDL): 213