A study on high performance metal-insulator-semiconductor devices with atomic order flat gate insulator film/silicon interface

Notes on use

Search by Bookstore

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 博士論文
Title: A study on high performance metal-insulator-semiconductor devices with atomic order flat gate insulator film/silicon interface
Author/Editor: Rihito Kuroda [著]
Author Heading: 黒田, 理人クロダ, リヒト
Publication, Distribution, etc.: [Rihito Kuroda]
Publication Date: [2010]
Publication Date (W3CDTF): 2010
Extent: 1冊
Alternative Title: 原子オーダー平坦ゲート絶縁膜/シリコン界面を有する金属-絶縁膜-半導体デバイスの高性能化に関する研究ゲンシオーダーヘイタンゲートゼツエンマク
Degree grantor/type: 東北大学
Date Granted: 平成22年3月25日
Date Granted (W3CDTF): 2010
Dissertation Number: 甲第13510号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: UT51
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2010-J459
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000011020679
http://id.ndl.go.jp/bib/000011020679
Bibliographic Record Category (NDL): 213