Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits

Capacity, size, etc.: 4 microfiches (284 fr.) : negative, ill. ; 11 x 15 cm.

Name of awarding university/degree: Eidgenossische Technische Hochschule Zurich

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Material Type: 博士論文
Title: Sub-micron InP/GaAsSb/InP double heterojunction bipolar transistors for ultra high-speed digital integrated circuits
Author/Editor: Urs Hammer.
Author Heading: Hammer, Urs.
Publication, Distribution, etc.: Zurich : Eidgenossische Technische Hochschule Zurich
Publication Date: 2009.
Extent: 4 microfiches (284 fr.) : negative, ill. ; 11 x 15 cm.
Degree grantor/type: Eidgenossische Technische Hochschule Zurich
Date Granted: 2009.
Date Granted (W3CDTF): 2009
Note (Dissertation): 博士論文
Thesis (doctoral) --Eidgenossische Technische Hochschule Zurich, 2009.
Place of Publication (Country Code): CH
Text Language Code: eng
Note (Material Type): [microform]
Note (Bibliography): Includes bibliographies.
Summary in English and German.
Holding library: 国立国会図書館
Call No.: LS-DISE-18502
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 000011093182
http://id.ndl.go.jp/bib/000011093182
Bibliographic Record Category (NDL): 216