透過型電子顕微鏡を用いた抵抗変化型メモリの動作機構解明の研究

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Material Type: 博士論文
Title: 透過型電子顕微鏡を用いた抵抗変化型メモリの動作機構解明の研究
Title Transcription: トウカガタデンシケンビキョウオモチイタテイコウヘンカガタメモリノドウサキコウカイメイノケンキュウ
Author/Editor: 藤井孝史 [著]
Author Heading: 藤井, 孝史フジイ, タカシ
Publication, Distribution, etc.: [藤井孝史]
Publication Date: [2012]
Publication Date (W3CDTF): 2012
Extent: 1冊
Alternative Title: The resistance switching mechanism of resistance random access memories studied by using in-situ transmission electron microscopy
Degree grantor/type: 北海道大学
Date Granted: 平成24年3月22日
Date Granted (W3CDTF): 2012
Dissertation Number: 甲第10426号
Degree Type: 博士 (工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: jpn
NDLC: UT51
Target Audience: 一般
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2012-C176
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 023768877
http://id.ndl.go.jp/bib/023768877
Bibliographic Record Category (NDL): 213