Modeling of high resistive drift region in HVMOSFETs

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Material Type: 博士論文
Title: Modeling of high resistive drift region in HVMOSFETs
Author/Editor: Takashi Saito [著]
Author Heading: 斉藤, 隆サイトウ, タカシ
Publication, Distribution, etc.: [Takashi Saito]
Publication Date: [2011]
Publication Date (W3CDTF): 2011
Extent: 1冊
Alternative Title: 高耐圧MOSFETにおける高抵抗ドリフト領域のモデリングコウタイアツ MOSFET ニオケルコウテイコウドリフトリョウイキノモデリング
Degree grantor/type: 広島大学
Date Granted: 平成23年9月5日
Date Granted (W3CDTF): 2011
Dissertation Number: 甲第5608号
Degree Type: 博士(工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: UT51
Target Audience: 一般
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2015-B168
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 026725887
http://id.ndl.go.jp/bib/026725887
Bibliographic Record Category (NDL): 213