Reduction of dislocations in gallium nitride grown by metal organic vapor phase epitaxy using novel seed layers and controlled nucleation

Notes on use

Search by Bookstore

You can check the details of this material, its authority (keywords that refer to materials on the same subject, author's name, etc.), etc.

Material Type: 博士論文
Title: Reduction of dislocations in gallium nitride grown by metal organic vapor phase epitaxy using novel seed layers and controlled nucleation
Author/Editor: Wang Hongbo [著]
Author Heading: 王, 宏波オウ, コウハ
Publication, Distribution, etc.: [Wang Hongbo]
Publication Date: [2014]
Publication Date (W3CDTF): 2014
Extent: 1冊
Alternative Title: 新規シード層と核発生制御による有機金属気相成長GaNの転位低減シンキシードソウトカクハッセイセイギョニヨルユウキキンゾクキソウセイチョウ GaN ノテンイテイゲン
Degree grantor/type: 東京大学
Date Granted: 平成26年9月26日
Date Granted (W3CDTF): 2014
Dissertation Number: 甲第31048号
Degree Type: 博士(工学)
Note (Dissertation): 博士論文
Place of Publication (Country Code): JP
Text Language Code: eng
NDLC: UT51
Target Audience: 一般
Note (General): 博士論文
Holding library: 国立国会図書館
Call No.: UT51-2015-C664
Data Provider (Database): 国立国会図書館 : 国立国会図書館蔵書
https://ndlsearch.ndl.go.jp
Bibliographic ID (NDL): 027265940
http://id.ndl.go.jp/bib/027265940
Bibliographic Record Category (NDL): 213