Quantitative study of vacancy defects in quenched tungsten by combined field-ion microscopy and electrical resistometry (DOE ; DOE/ER/05002-31; DE83006040)

Quantitative study of vacancy defects in quenched tungsten by combined field-ion microscopy and electrical resistometry

(DOE ; DOE/ER/05002-31; DE83006040)

Material type: 図書

Author: Park, J.Y. [et al.]

Publisher: Massachusetts Inst. of Tech.

Publication date: 1983.

Material Format: Paper

Capacity, size, etc.: 41 p.

NDC: -

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Paper

Material Type: 図書
Title: Quantitative study of vacancy defects in quenched tungsten by combined field-ion microscopy and electrical resistometry
Author/Editor: Park, J.Y. [et al.]
Series Title: DOE ; DOE/ER/05002-31; DE83006040
Author Heading: Park, J.Y.
Huang, H.C.W.
Siegel, R.W.
Balluffi, R.W.
Publication, Distribution, etc.: Cambridge, MA (USA) : Massachusetts Inst. of Tech.
Publication Date: 1983.
Publication Date (W3CDTF): 1983
Extent: 41 p.
Place of Publication (Country Code): us
Text Language Code: eng
Target Audience: 一般
Data Provider (Database): 日本原子力研究開発機構 : 日本原子力研究開発機構所蔵目録データベース
https://library-documents.jaea.go.jp/opac/opac_search/