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図書

(AlGa)As/(InGa)As strained-quantum-well FETs (field-effect transistors) on silicon dioxide by selective device lift-off as an alternative to heteropitaxy (SAND ; SAND-88-2130; CONF-881234-; DE88017116)

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(AlGa)As/(InGa)As strained-quantum-well FETs (field-effect transistors) on silicon dioxide by selective device lift-off as an alternative to heteropitaxy

(SAND ; SAND-88-2130; CONF-881234-; DE88017116)

Material type
図書
Author
Myers, D.R., Klem, J.F., Lott, J.A.
Publisher
Sandia National Labs.
Publication date
1988.1.
Material Format
Paper
Capacity, size, etc.
9p
NDC
-
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Paper

Material Type
図書
Title
(AlGa)As/(InGa)As strained-quantum-well FETs (field-effect transistors) on silicon dioxide by selective device lift-off as an alternative to heteropitaxy
Author/Editor
Myers, D.R., Klem, J.F., Lott, J.A.
Series Title
SAND ; SAND-88-2130; CONF-881234-; DE88017116
Author Heading
Myers, D.R.
Klem, J.F.
Lott, J.A.
Publication, Distribution, etc.
Albuquerque, NM (USA) : Sandia National Labs.
Publication Date
1988.1.
Publication Date (W3CDTF)
1988
Extent
9p
Place of Publication (Country Code)
us