Semiconductors and semimetals v. 53

• Material Type: 図書
• ISBN: 0127521615
• Title: Semiconductors and semimetals
• Volume: v. 53
• Publication, Distribution, etc.: Academic Press
• Size: 24 cm
• Alternative Title: Semiconductors and semimetals : a treatise
• Place of Publication (Country Code): us
• Target Audience: 一般
• Note (General): Vol. 53: Comulative subject and author index including tables of contents volmes 1-50
• Related Material: Effect of disorder and defects in ion-implanted semiconductors : optical and photothermal characterization; https://cir.nii.ac.jp/crid/1130000793682921984; Photonic crystal metasurface optoelectronics; https://cir.nii.ac.jp/crid/1130000793688725248; Preparation and structure; https://cir.nii.ac.jp/crid/1130000793702771328; Epitaxial microstructures; https://cir.nii.ac.jp/crid/1130000793884897152; Silicon photonics; https://cir.nii.ac.jp/crid/1130000793939868800; Highly conducting quasi-one-dimensional organic crystals; https://cir.nii.ac.jp/crid/1130000794128221952; Recent trends in thermoelectric materials research; https://cir.nii.ac.jp/crid/1130000794422499968; Nanostructured systems; https://cir.nii.ac.jp/crid/1130000794423245952; Effect of disorder and defects in ion-implanted semiconductors : electrical and physicochemical characterization; https://cir.nii.ac.jp/crid/1130000794482207104; Oxygen in silicon; https://cir.nii.ac.jp/crid/1130000794664254720; Conducting organic materials and devices; https://cir.nii.ac.jp/crid/1130000794718805504; Growth and theory; https://cir.nii.ac.jp/crid/1130000794850748800; Photodetectors; https://cir.nii.ac.jp/crid/1130000794892590848; Solar cells; https://cir.nii.ac.jp/crid/1130000795160585984; Contacts, junctions, emitters; https://cir.nii.ac.jp/crid/1130000795281486720; Hydrogen in semiconductors; https://cir.nii.ac.jp/crid/1130000795295311232; Ultrafast Physical Processes in Semiconductors; https://cir.nii.ac.jp/crid/1130000795347618688; SiC materials and devices; https://cir.nii.ac.jp/crid/1130000795402055936; Semiconductor injection lasers, II, light-emitting diodes; https://cir.nii.ac.jp/crid/1130000795530376576; Semiconductor injection lasers I; https://cir.nii.ac.jp/crid/1130000795632006144; Modulation techniques; https://cir.nii.ac.jp/crid/1130000795650225152; Measurement of high-speed signals in solid state devices; https://cir.nii.ac.jp/crid/1130000795881041024; Infrared detectors; https://cir.nii.ac.jp/crid/1130000795926860672; Very high speed integrated circuits : gallium arsenide LSI; https://cir.nii.ac.jp/crid/1130000796102995200; Future directions in silicon photonics; https://cir.nii.ac.jp/crid/1130000796142285312; Properties of chalcogenide glasses; https://cir.nii.ac.jp/crid/1130000796271106560; Properties and applications; https://cir.nii.ac.jp/crid/1130000796323440256; Nonlinear optics in semiconductors; https://cir.nii.ac.jp/crid/1130000796478166400; Light emission in silicon : from physics to devices; https://cir.nii.ac.jp/crid/1130000796498579200; The spectroscopy of semiconductors; https://cir.nii.ac.jp/crid/1130000796595283840; Spintronics; https://cir.nii.ac.jp/crid/1130000796694316672; 2D materials; https://cir.nii.ac.jp/crid/1130000796749138048; Isotope effects in solid state physics; https://cir.nii.ac.jp/crid/1130000796768438912; Self-assembled InGaAs/GaAs, quantum dots; https://cir.nii.ac.jp/crid/1130000796976116096; Advances in semiconductor lasers; https://cir.nii.ac.jp/crid/1130000797106549376; Optical properties; https://cir.nii.ac.jp/crid/1130000797238666880; Glass formation, structure, and stimulated transformaitons in chalcogenide glasses; https://cir.nii.ac.jp/crid/1130000797270199808; Applications and devices; https://cir.nii.ac.jp/crid/1130000797349112704; Semiconductors for photocatalysis; https://cir.nii.ac.jp/crid/1130000797485642752; Defects, (HgCd)Se, (HgCd)Te; https://cir.nii.ac.jp/crid/1130000797537014912; Nanowires for energy applications; https://cir.nii.ac.jp/crid/1130000797565184256; III-nitride semiconductor optoelectronics; https://cir.nii.ac.jp/crid/1130000797646423808; Germanium silicon : physics and materials; https://cir.nii.ac.jp/crid/1130000797659166976; Very high speed integrated circuits : heterostructure; https://cir.nii.ac.jp/crid/1130000797898267776; Diluted magnetic semiconductors; https://cir.nii.ac.jp/crid/1130000797980321536; CW beam processing of silicon and other semiconductors; https://cir.nii.ac.jp/crid/1130000798205204736; Thin-film diamond; https://cir.nii.ac.jp/crid/1130000798219762304; Optical properties of III-V compounds; https://cir.nii.ac.jp/crid/1130282268657004928; Physics of III-V compounds; https://cir.nii.ac.jp/crid/1130282268657426816; From molecular aggregates to organic solar cells; https://cir.nii.ac.jp/crid/1130282268739199232; Applications of multiquantum wells, selective doping, and superlattices; https://cir.nii.ac.jp/crid/1130282268857310080; III-nitride electronic devices; https://cir.nii.ac.jp/crid/1130282268861930112; Identification of defects in semiconductors; https://cir.nii.ac.jp/crid/1130282268862915712; Semiconductors for room temperature nuclear detector applications; https://cir.nii.ac.jp/crid/1130282268865876480; Electronic and transport properties; https://cir.nii.ac.jp/crid/1130282269715487744; Mercury cadmium telluride; https://cir.nii.ac.jp/crid/1130282269715907072; Advances in infrared photodetectors; https://cir.nii.ac.jp/crid/1130282269795260800; Biomolecular systems; https://cir.nii.ac.jp/crid/1130282269886307456; Material growth technologies; https://cir.nii.ac.jp/crid/1130282270276311680; Applications of chalcogenide glasses; https://cir.nii.ac.jp/crid/1130282270305383424; Minority carriers in III-V semiconductors : physics and applications; https://cir.nii.ac.jp/crid/1130282270424118528; Advances in photovoltaics; https://cir.nii.ac.jp/crid/1130282270436043392; Oxide semiconductors; https://cir.nii.ac.jp/crid/1130282270537645312; Strained-Layer superlattices : materials science and technology; https://cir.nii.ac.jp/crid/1130282270555932672; Defects in semiconductors; https://cir.nii.ac.jp/crid/1130282270735864832; Semi-insulating GaAs; https://cir.nii.ac.jp/crid/1130282270739422848; Deep levels, GaAs, alloys, photochemistry; https://cir.nii.ac.jp/crid/1130282270772782208; Silicon-germanium strained layers and heterostructures; https://cir.nii.ac.jp/crid/1130282270877760896; Processing and properties of compound semiconductors; https://cir.nii.ac.jp/crid/1130282270967829120; Cadmium telluride; https://cir.nii.ac.jp/crid/1130282270992382208; Strained-Layer superlattices : physics; https://cir.nii.ac.jp/crid/1130282271125155456; Chemical mechanical polishing in silicon processing; https://cir.nii.ac.jp/crid/1130282271250351104; Silicon epitaxy; https://cir.nii.ac.jp/crid/1130282271258205056; High pressure in semiconductor physics; https://cir.nii.ac.jp/crid/1130282271609124480; High brightness light emitting diodes; https://cir.nii.ac.jp/crid/1130282271610848384; Transport and optical phenomena; https://cir.nii.ac.jp/crid/1130282271656423424; Gallium nitride (GaN); https://cir.nii.ac.jp/crid/1130282271785844224; Lasers, junctions, transport; https://cir.nii.ac.jp/crid/1130282271832198016; Device applications; https://cir.nii.ac.jp/crid/1130282271906759552; II-VI blue/green light emitters : device physics and epitaxial growth; https://cir.nii.ac.jp/crid/1130282272044380928; Pulsed laser processing of semiconductors; https://cir.nii.ac.jp/crid/1130282272227566208; Uncooled infrared imaging arrays and systems; https://cir.nii.ac.jp/crid/1130282272284148864; Integrated optoelectronics; https://cir.nii.ac.jp/crid/1130282272371513600; High speed heterostructure devices; https://cir.nii.ac.jp/crid/1130282272440299776; Indium phosphide : crystal growth and characterization; https://cir.nii.ac.jp/crid/1130282272545897600; The mechanical properties of semiconductors; https://cir.nii.ac.jp/crid/1130282272550265344; Intersubband transitions in quantum wells; https://cir.nii.ac.jp/crid/1130282272597239424; Imperfections in III/V materials; https://cir.nii.ac.jp/crid/1130282272666245376; Transport phenomena; https://cir.nii.ac.jp/crid/1130282272733175680; Laser crystallization of silicon; https://cir.nii.ac.jp/crid/1130282272838112896; III-V compound semiconductors and semiconductor properties of superionic materials; https://cir.nii.ac.jp/crid/1130282272931432576; Electroluminescence; https://cir.nii.ac.jp/crid/1130282272988422656; Injection phenomena; https://cir.nii.ac.jp/crid/1130282273093236992; Diamond for quantum applications; https://cir.nii.ac.jp/crid/1130285377252313088
• Related Material (URI): https://ci.nii.ac.jp/ncid/BA00240449#entity; https://lccn.loc.gov/65026048
• Data Provider (Database): 国立情報学研究所 : CiNii Research
• Original Data Provider (Database): CiNii Books; https://ci.nii.ac.jp/books
• NCID: https://ci.nii.ac.jp/ncid/BA00240449 : BA00240449
• LC Control Number: 65026048; https://lccn.loc.gov/65026048

Table of Contents

Effect of disorder and defects in ion-implanted semiconductors : optical and photothermal characterization

Photonic crystal metasurface optoelectronics

Preparation and structure

Epitaxial microstructures

Silicon photonics