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図書

Studies on ultrathin silicon nitride film formation for high-k gate dielectrics using plasma enhanced chemical vapor deposition

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Studies on ultrathin silicon nitride film formation for high-k gate dielectrics using plasma enhanced chemical vapor deposition

Material type
図書
Author
Hiroyuki Ohta
Publisher
[s.n.]
Publication date
[2001]
Material Format
Paper
Capacity, size, etc.
30 cm
NDC
-
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Notes on use

Note (General):

Thesis (Ph.D.)--Nagoya University. Graduate School of Engineering, 2001Kind of academic degree: 博士(工学)Date degree granted: 2001-03-26...

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Paper

Material Type
図書
Author/Editor
Hiroyuki Ohta
Author Heading
大田, 裕之 オオタ, ヒロユキ
Publication, Distribution, etc.
Publication Date
[2001]
Publication Date (W3CDTF)
2001
Size
30 cm
Alternative Title
PECVD法による高誘電率ゲート絶縁膜用極薄シリコン窒化膜形成に関する研究
Text Language Code
en