新しい界面制御技術を用いたInP系超高速・超低消費電力HEMTの試作

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Material Type: 図書
Title: 新しい界面制御技術を用いたInP系超高速・超低消費電力HEMTの試作
Title Transcription: アタラシイカイメンセイギョギジュツオモチイタ InPケイチョウコウソクチョウテイショウヒデンリョク HEMT ノシサク
Author/Editor: 橋詰保研究代表
Author Heading: 橋詰, 保ハシズメ, タモツ
https://ci.nii.ac.jp/author/DA18262142
Publication, Distribution, etc.: [橋詰保]
Publication Date: 1999.3
Publication Date (W3CDTF): 1999
Size: 30cm
Place of Publication (Country Code): ja
Target Audience: 一般
Note (General): 研究代表者所属: 北海道大学量子界面エレクトロニクス研究センター
Related Material: 科学研究費補助金(基盤研究(B)(2))研究成果報告書
https://cir.nii.ac.jp/crid/1130000796573175552
Related Material (URI): https://ci.nii.ac.jp/ncid/BA41935124#entity
Periodical Title: 科学研究費補助金(基盤研究(B)(2))研究成果報告書
https://cir.nii.ac.jp/crid/1130000796573175552
Data Provider (Database): 国立情報学研究所 : CiNii Research
Original Data Provider (Database): CiNii Books
https://ci.nii.ac.jp/books
NCID: https://ci.nii.ac.jp/ncid/BA41935124 : BA41935124