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Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

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Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations

Material type
記事
Author
D. J. Stirlandほか
Publisher
AIP Publishing
Publication date
1985-06-01
Material Format
Digital
Journal name
Applied Physics Letters 46 11
Publication Page
p.1066-1068
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Detailed bibliographic record

Summary, etc.：

<jats:p>Regions of low dislocation density (∼5×102 cm−2) in 2-mm-thick {001} wafers from indium doped, liquid encapsulated Czochralski grown, 2-in-dia...

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Material Type
記事
Title
Direct observation of an enhanced concentration of the principal deep level EL2 at single dislocations
Author Heading
D. J. Stirland
M. R. Brozel
I. Grant
Publication Date
1985-06-01
Publication Date (W3CDTF)
1985-06-01
Periodical title
Applied Physics Letters
No. or year of volume/issue
46 11
Volume
46
Issue
11
Pages
1066-1068