An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design

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Material Type: 記事
Title: An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design
Author Heading: M. Sudow
M. Fagerlind
M. Thorsell
K. Andersson
N. Billstrom
P.-A. Nilsson
N. Rorsman
Publication Date: 2008-08
Publication Date (W3CDTF): 2008-08
Periodical title: IEEE Transactions on Microwave Theory and Techniques
No. or year of volume/issue: 56 8
Volume: 56
Issue: 8
Pages: 1827-1833
Publication date of volume/issue (W3CDTF): 2008-08
ISSN (Periodical Title): 00189480
Publication (Periodical Title): Institute of Electrical and Electronics Engineers (IEEE)
Target Audience: 一般
DOI: 10.1109/tmtt.2008.927317
Date Created (W3CDTF): 2008-08-11
Rights (production): https://ieeexplore.ieee.org/Xplorehelp/downloads/license-information/IEEE.html
Related Material (URI): http://xplorestaging.ieee.org/ielx5/22/4589151/04560050.pdf?arnumber=4560050
Is Referenced By: Low <i>k</i>-dielectric benzocyclobutane encapsulated AlGaN/GaN HEMTs with Improved off-state breakdown voltage
https://cir.nii.ac.jp/crid/1360284924866515456
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
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