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Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

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Heavy Ion and Proton-Induced Single Event Upset Characteristics of a 3-D NAND Flash Memory

Material type
記事
Author
Dakai Chenほか
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Publication date
2018-01
Material Format
Digital
Journal name
IEEE Transactions on Nuclear Science 65 1
Publication Page
p.19-26
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Digital

Material Type
記事
Publication Date
2018-01
Publication Date (W3CDTF)
2018-01
Periodical title
IEEE Transactions on Nuclear Science
No. or year of volume/issue
65 1
Volume
65
Issue
1
Pages
19-26