Near-field radiative transfer based thermal rectification using doped silicon

• Material Type: 記事
• Title: Near-field radiative transfer based thermal rectification using doped silicon
• Author Heading: Soumyadipta Basu; Mathieu Francoeur
• Publication Date: 2011-03-14
• Publication Date (W3CDTF): 2011-03-14
• Periodical title: Applied Physics Letters
• No. or year of volume/issue: 98 11
• Volume: 98
• Issue: 11
• Publication date of volume/issue (W3CDTF): 2011-03-14
• ISSN (Periodical Title): 00036951
• Publication (Periodical Title): AIP Publishing
• Target Audience: 一般
• DOI: 10.1063/1.3567026
• Date Created (W3CDTF): 2011-03-15
• Related Material (URI): https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3567026/13219470/113106_1_online.pdf
• Is Referenced By: Near-field radiative heat transfer between graphene-covered hyperbolic metamaterials; https://cir.nii.ac.jp/crid/1360003449891534720; Near-field thermal radiation transfer between semiconductors based on thickness control and introduction of photonic crystals; https://cir.nii.ac.jp/crid/1360283692793462144; Dynamic Modulation of Radiative Heat Transfer beyond the Blackbody Limit; https://cir.nii.ac.jp/crid/1360565166565649664
• Data Provider (Database): 国立情報学研究所 : CiNii Research; https://cir.nii.ac.jp/
• Original Data Provider (Database): Crossref; https://www.crossref.org

• Summary, etc.: <jats:p>In this letter, we have designed a near-field thermal rectifier using a film and a bulk of doped silicon, with different doping levels, separa...