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Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition

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Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition

Material type
記事
Author
J. van de Venほか
Publisher
AIP Publishing
Publication date
1986-09-01
Material Format
Digital
Journal name
Journal of Applied Physics 60 5
Publication Page
p.1648-1660
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Detailed bibliographic record

Summary, etc.：

<jats:p>The incorporation of impurities in GaAs epitaxial layers grown from trimethyl gallium (TMG) and AsH3 has been studied in detail by varying a l...

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Material Type
記事
Title
Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition
Author Heading
J. van de Ven
H. G. Schoot
L. J. Giling
Publication Date
1986-09-01
Publication Date (W3CDTF)
1986-09-01
Periodical title
Journal of Applied Physics
No. or year of volume/issue
60 5
Volume
60
Issue
5
Pages
1648-1660