Disorder scattering in solid solutions of III–V semiconducting compounds

• Material Type: 記事
• Title: Disorder scattering in solid solutions of III–V semiconducting compounds
• Author Heading: L. Makowski; M. Glicksman
• Publication Date: 1973-01
• Publication Date (W3CDTF): 1973-01
• Periodical title: Journal of Physics and Chemistry of Solids
• No. or year of volume/issue: 34 3
• Volume: 34
• Issue: 3
• Pages: 487-492
• Publication date of volume/issue (W3CDTF): 1973-01
• ISSN (Periodical Title): 00223697
• Publication (Periodical Title): Elsevier BV
• Subject Heading: Condensed Matter Physics; General Materials Science; General Chemistry
• Target Audience: 一般
• DOI: 10.1016/0022-3697(73)90042-5
• Date Created (W3CDTF): 2004-08-26
• Rights (production): https://www.elsevier.com/tdm/userlicense/1.0/
• Related Material (URI): https://api.elsevier.com/content/article/PII:0022369773900425?httpAccept=text/xml; https://api.elsevier.com/content/article/PII:0022369773900425?httpAccept=text/plain
• Is Referenced By: Improved-Brooks Mobility Formula for Disorder Scattering in Semiconductor Alloys; https://cir.nii.ac.jp/crid/1360003446837826176; Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films; https://cir.nii.ac.jp/crid/1360003449885221760; Analysis of Disorder Scattering in Ga_0.47In_0.53As Using Gaussian Potential; https://cir.nii.ac.jp/crid/1360284921814621824; Band-gap engineering of rutile-structured <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>SnO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mtext>−</mml:mtext><mml:msub><mml:mi>GeO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mtext>−</mml:mtext><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> alloy system; https://cir.nii.ac.jp/crid/1360298755644587776; Higher mobility in bulk semiconductors by separating the dopants from the charge-conducting band – a case study of thermoelectric PbSe; https://cir.nii.ac.jp/crid/1360565166843518848; Preparation and thermoelectric properties of sintered n-type K₈M₈Sn₃₈ (M = Al, Ga and In) with the type-I clathrate structure; https://cir.nii.ac.jp/crid/1360565167381632000; Thermoelectric properties of type-I clathrate Na8Ga8Ge38; https://cir.nii.ac.jp/crid/1360572092483970432; Calculated Electron Mobility of Two-Dimensional Electrons in AlInAs/InGaAs and InP/InGaAs Single Heterostructures; https://cir.nii.ac.jp/crid/1360847871768429824; Effect of Alloy Scattering on Electron and Hole Impact Ionization Rates in Ga_1-xIn_xAs_yP_1-y Alloy System; https://cir.nii.ac.jp/crid/1360847871768756480; Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures; https://cir.nii.ac.jp/crid/1360847871770320256; Carrier mobilities, thermoelectric properties, and band structures of type-I clathrates Ba₈M₁₆Ge₃₀ (M = Al, Ga, In); https://cir.nii.ac.jp/crid/1360853567461785984; Theoretical Studies of Disorder Scattering in Compound Semiconductor Alloys; https://cir.nii.ac.jp/crid/1390001204189230336; Effects of residual carbon and hydrogen atoms on electrical property of GaAsN films grown by chemical beam epitaxy; https://cir.nii.ac.jp/crid/1520009407624459648; Improvements in optoelectrical properties of GaAsN by controlling step density during chemical beam epitaxy growth; https://cir.nii.ac.jp/crid/1520009407683110784; Effect of low growth rate in chemical beam epitaxy on carrier mobility and lifetime of p-GaAsN films; https://cir.nii.ac.jp/crid/1520290883090954240
• Data Provider (Database): 国立情報学研究所 : CiNii Research
• Original Data Provider (Database): Crossref; https://www.crossref.org