A new extraction method for effective channel length on lightly doped drain MOSFET's

Journal name: Proc. of Int. Conf. on Microelectronic Test Structures, San Diego, U.S.A.

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Material Type: 記事
Title: A new extraction method for effective channel length on lightly doped drain MOSFET's
Author Heading: IDA J.
Publication Date: 1990
Publication Date (W3CDTF): 1990
Periodical title: Proc. of Int. Conf. on Microelectronic Test Structures, San Diego, U.S.A.
Pages: 117-122
Publication date of volume/issue (W3CDTF): 1990
Target Audience: 一般
Data Provider (Database): 国立情報学研究所 : CiNii Research
https://cir.nii.ac.jp/
Original Data Provider (Database): CiNii Articles
NAID: 10000028316