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BREAKDOWN DURING HIGH-FIELD BIAS-TEMPERATURE STRESS (SAND ; SAND-99-2047C)

BREAKDOWN DURING HIGH-FIELD BIAS-TEMPERATURE STRESS (SAND ; SAND-99-2047C)
Paper図書
D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM)Sandia National Laboratories(Sandia National Laboratories)1999.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

EFFECT OF NEAR-INTERFACE NETWORK STRAIN ON THE MOBILITY OF PROTONS IN SIO2 (SAND ; SAND-99-1531C)

EFFECT OF NEAR-INTERFACE NETWORK STRAIN ON THE MOBILITY OF PROTONS IN SIO2 (SAND ; SAND-99-1531C)
Paper図書
D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM)Sandia National Laboratories(Sandia National Laboratories)1999.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

FOCUSED ION BEAM DAMAGE TO MOS INTEGRATED CIRCUITS (SAND ; SAND-2000-1163C)

FOCUSED ION BEAM DAMAGE TO MOS INTEGRATED CIRCUITS (SAND ; SAND-2000-1163C)
Paper図書
D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)2000.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

STABILITY OF TRAPPED ELECTRONS IN SIO(2);APPLIED PHYSICS LETTERS (SAND ; SAND-99-0254J)

STABILITY OF TRAPPED ELECTRONS IN SIO(2);APPLIED PHYSICS LETTERS (SAND ; SAND-99-0254J)
Paper図書
D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABORATORIES, ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

THERMALLY STIMULATED CURRENT IN SIO(2);MICROELECTRONICS RELIABILITY (SAND ; SAND-99-1474J)

THERMALLY STIMULATED CURRENT IN SIO(2);MICROELECTRONICS RELIABILITY (SAND ; SAND-99-1474J)
Paper図書
D. M. FLEETWOOD//ET AL. (SANDIA NATIONAL LABORATORIES (SNL), ALBUQUERQUE, NM, AND LIVERMORE, CA (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1999.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

TOTAL IONIZING DOSE EFFECTS ON MOS AND BIPOLAR DEVICES IN THE NATURAL SPACE RADIATION ENVIRONMENT (SAND ; SAND-98-2040C)

TOTAL IONIZING DOSE EFFECTS ON MOS AND BIPOLAR DEVICES IN THE NATURAL SPACE RADIATION ENVIRONMENT (SAND ; SAND-98-2040C)
Paper図書
D. M. FLEETWOOD (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1998.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD

EFFECTS OF IRRADIATION AND ISOCHRONAL ANNEAL TEMPERATURE ON HOLE AND ELECTRON TRAPPING IN MOS DEVICES (SAND ; SAND-98-0381C)

EFFECTS OF IRRADIATION AND ISOCHRONAL ANNEAL TEMPERATURE ON HOLE AND ELECTRON TRAPPING IN MOS DEVICES (SAND ; SAND-98-0381C)
Paper図書
D. M. FLEETWOOD//ET AL. (USDOE, WASHINGTON, DC)Sandia National Laboratories(Sandia National Laboratories)1998.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

STABILITY OF TRAPPED ELECTRONS IN SIO(SUB 2) (SAND ; SAND-98-1898C)

STABILITY OF TRAPPED ELECTRONS IN SIO(SUB 2) (SAND ; SAND-98-1898C)
Paper図書
D. M. FLEETWOOD// ET AL. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1998.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

LATENT INTERFACE TRAPS AND 1/F NOISE IN IRRADIATED MOS DEVICES (SAND ; SAND-97-0348C)

LATENT INTERFACE TRAPS AND 1/F NOISE IN IRRADIATED MOS DEVICES (SAND ; SAND-97-0348C)
Paper図書
D. M. FLEETWOOD//ET AL. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM)Sandia National Laboratories(Sandia National Laboratories)1997.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

ENHANCED LOW-RATE RADIATION-INDUCED CHARGE TRAPPING AT THE EMITTER-BASE/OXIDE INTERFACE OF BIPOLARB DEVICES (SAND ; SAND-96-2092C)

ENHANCED LOW-RATE RADIATION-INDUCED CHARGE TRAPPING AT THE EMITTER-BASE/OXIDE INTERFACE OF BIPOLARB DEVICES (SAND ; SAND-96-2092C)
Paper図書
D. M. FLEETWOOD//ET AL. (SANDIA NATIONAL LABS. ALBUQUERQUE, NM.)Sandia National Laboratories(Sandia National Laboratories)1996.
Other Libraries in Japan
  • Author HeadingD. M. FLEETWOOD.

Radiation effects and soft errors in integrated circuits and electronic devices

Radiation effects and soft errors in integrated circuits and electronic devices
Paper図書
editors, R.D. Schrimpf, D.M. FleetwoodWorld Scientificc2004
Other Libraries in Japan

Effect of radiation-induced charge on 1/f noise in MOS devices (SAND ; SAND-90-2294C) (CONF ; CONF-901235-1)

Effect of radiation-induced charge on 1/f noise in MOS devices (SAND ; SAND-90-2294C) (CONF ; CONF-901235-1)
Paper図書
T.L. Meisenheimer, D.M. Fleetwood1990
Other Libraries in Japan

Total-dose radiation hardness assurance for space electronics (SAND ; SAND-90-2724C) (CONF ; CONF-910116-5)

Total-dose radiation hardness assurance for space electronics (SAND ; SAND-90-2724C) (CONF ; CONF-910116-5)
Paper図書
P.S. Winokur, D.M. Fleetwood1990
Other Libraries in Japan

Ceramic coatings on package lids for radiation protection (SAND ; SAND-91-0301)

Ceramic coatings on package lids for radiation protection (SAND ; SAND-91-0301)
Paper図書
T.J. Garino, C.A. Reber, D.M. Fleetwood1991
Other Libraries in Japan

1/f noise: A nondestructive technique to predict MOS radiation hardness (SAND ; SAND-89-0379C) (CONF ; CONF-890723-3)

1/f noise: A nondestructive technique to predict MOS radiation hardness (SAND ; SAND-89-0379C) (CONF ; CONF-890723-3)
Paper図書
J.H. Scofield, T.P. Doerr, D.M. Fleetwood1989
Other Libraries in Japan

Dual-transistor method to determine. delta. V/sub ot/ and delta. V/sub it/ for MOS devices (SAND ; SAND-89-0218C)

Dual-transistor method to determine. delta. V/sub ot/ and delta. V/sub it/ for MOS devices (SAND ; SAND-89-0218C)
Paper図書
D.M. Fleetwood, J.R. Schwank, F.W. Sexton1989
Other Libraries in Japan

Total-dose hardness assurance for space applications of commercial CMOS devices (SAND ; SAND-89-0181C) (CONF ; CONF-890723-2)

Total-dose hardness assurance for space applications of commercial CMOS devices (SAND ; SAND-89-0181C) (CONF ; CONF-890723-2)
Paper図書
D.M. Fleetwood, P.S. Winokur, R.L. Pease1989
Other Libraries in Japan

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