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Growth of homo-epitaxial silicon at low temperatures using hot wire chemical vapor deposition (NREL ; NREL/CP-520-26365; DE00750927)

Growth of homo-epitaxial silicon at low temperatures using hot wire chemical vapor deposition (NREL ; NREL/CP-520-26365; DE00750927)
Paper図書
Thiesen, J., Jones, K.M., Matson, R. [et al.]National Renewable Energy Lab.1999.12.13.
Other Libraries in Japan
  • Author HeadingThiesen, J. Jones, K.M. Matson, R. Reedy, R. Crandall, R. Iwaniczko, E. Mahan, H.

The use of electron channeling patterns for process optimization of low-temperature epitaxial silicon using hot-wire chemical vapor deposition (NREL ; NREL/CP-520-26364; DE00750924)

The use of electron channeling patterns for process optimization of low-temperature epitaxial silicon using hot-wire chemical vapor deposition (NREL ; NREL/CP-520-26364; DE00750924)
Paper図書
Matson, R., Thiesen, J., Jones, K.M. [et al.]National Renewable Energy Lab.1998.10.25.
Other Libraries in Japan
  • Author HeadingMatson, R. Thiesen, J. Jones, K.M. Crandall, R. Iwaniczko, E. Mahan, H.

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