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Effects of irradiation and proton implantation on the density of mobile protons in SiO(sub 2) films SAND980914C DE98 004955 CONF980705

Effects of irradiation and proton implantation on the density of mobile protons in SiO(sub 2) films SAND980914C DE98 004955 CONF980705
Microform規格・テクニカルリポート類
Vanheusden, K, Fleetwood, D. M, Schwank, J. R, Shaneyfelt, M. R, Meisenheimer, T. L1998<LS-DE98/004955>
National Diet Library

Effects of temperature on MOS radiation response SAND-97-0602C DE97 003729 CONF-9709341

Effects of temperature on MOS radiation response SAND-97-0602C DE97 003729 CONF-9709341
Microform規格・テクニカルリポート類
Shaneyfelt, M. R, Schwank, J. R, Fleetwood, D. M, Winokur, P. S1997<LS-DE97/003729>
National Diet Library

Dose enhancement in a room cobalt-60 source SAND-97-0424C DE97 003201 CONF-97071112

Dose enhancement in a room cobalt-60 source SAND-97-0424C DE97 003201 CONF-97071112
Microform規格・テクニカルリポート類
Simons, M, Pease, R. L, Fleetwood, D. M, Schwank, J. R, Krzesniak, M1997<LS-DE97/003201>
National Diet Library

Fast and slow border traps in MOS devices SAND-95-1935C DE95 017550 CONF-9512471

Fast and slow border traps in MOS devices SAND-95-1935C DE95 017550 CONF-9512471
Microform規格・テクニカルリポート類
Fleetwood, D. M, Warren, W. L, Schwank, J. R, Winokur, P. S, Shaneyfelt, M. R1995<LS-DE95/017550>
National Diet Library

Proton irradiation effects on advanced digital and microwave III-V components SAND-94-0205C DE94 018742 CONF-94072614

Proton irradiation effects on advanced digital and microwave III-V components SAND-94-0205C DE94 018742 CONF-94072614
Microform規格・テクニカルリポート類
Hash, G. L, Schwank, J. R, Shaneyfelt, M. R, Sandoval, C. E, Connors, M. P1994<LS-DE94/018742>
National Diet Library

Effects of reliability screens of MOS charge trapping SAND-95-0514C DE95 017838 CONF-95091071

Effects of reliability screens of MOS charge trapping SAND-95-0514C DE95 017838 CONF-95091071
Microform規格・テクニカルリポート類
Shanneyfelt, M. R, Winokur, P. S, Fleetwood, D. M, Schwank, J. R, Reber, R. A. Jr1995<LS-DE95/017838>
National Diet Library

SEU and SEL response of the Westinghouse 64K E(sup 2)PROM, analog devices AD7876 12-bit ADC, and the Intel 82527 Serial Communications Controller SAND-94-0449C DE95 003349 CONF-94072616

SEU and SEL response of the Westinghouse 64K E(sup 2)PROM, analog devices AD7876 12-bit ADC, and the Intel 82527 Serial Communications Controller SAND-94-0449C DE95 003349 CONF-94072616
Microform規格・テクニカルリポート類
Sexton, F. W, Hash, G. L, Connors, M. P, Murray, J. R, Schwank, J. R1994<LS-DE95/003349>
National Diet Library

SPACE AND MILITARY RADIATION EFFECTS IN SILICON-ON-INSULATOR DEVICES (SAND ; SAND-96-1542C)

SPACE AND MILITARY RADIATION EFFECTS IN SILICON-ON-INSULATOR DEVICES (SAND ; SAND-96-1542C)
Paper図書
SCHWANK, J.R. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1996.
Other Libraries in Japan
  • Author HeadingSCHWANK, J.R.

BASIC MECHANISMS OF RADIATION EFFECTS IN THE NATURAL SPACE RADIATION ENVIRONMENT (SAND ; SAND-94-1580C)

BASIC MECHANISMS OF RADIATION EFFECTS IN THE NATURAL SPACE RADIATION ENVIRONMENT (SAND ; SAND-94-1580C)
Paper図書
SCHWANK, J.R. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1994.
Other Libraries in Japan
  • Author HeadingSCHWANK, J.R.

EFFECTS OF RELIABILITY SCREENS OF MOS CHARGE TRAPPING (SAND ; SAND-95-0514C)

EFFECTS OF RELIABILITY SCREENS OF MOS CHARGE TRAPPING (SAND ; SAND-95-0514C)
Paper図書
SHANNEYFELT, M.R.// WINOKUR, P.S.// FLEETWOOD, D.M.// SCHWANK, J.R.// REBER, R.A. JR. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1995.
Other Libraries in Japan
  • Author HeadingSHANNEYFELT, M.R. WINOKUR, P.S. FLEETWOOD, D.M. SCHWANK, J.R. REBER, R.A. JR.

SIMPLE METHOD TO ESTIMATE MOS OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP DENSITIES. (SAND ; SAND-93-1927C)

SIMPLE METHOD TO ESTIMATE MOS OXIDE-TRAP, INTERFACE-TRAP, AND BORDER-TRAP DENSITIES. (SAND ; SAND-93-1927C)
Paper図書
FLEETWOOD, D.M.// SHANEYFELT, M.R.// SCHWANK, J.R. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1993.
Other Libraries in Japan
  • Author HeadingFLEETWOOD, D.M. SHANEYFELT, M.R. SCHWANK, J.R.

FAST AND SLOW BORDER TRAPS IN MOS DEVICES (SAND ; SAND-95-1935C)

FAST AND SLOW BORDER TRAPS IN MOS DEVICES (SAND ; SAND-95-1935C)
Paper図書
FLEETWOOD, D.M.// WARREN, W.L.// SCHWANK, J.R.// WINOKUR, P.S.// SHANEYFELT, M.R.// RIEWE, L.C. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1995.
Other Libraries in Japan
  • Author HeadingFLEETWOOD, D.M. WARREN, W.L. SCHWANK, J.R. WINOKUR, P.S. SHANEYFELT, M.R...

ROLE OF BURN-IN DURING QUALIFICATION TESTING (SAND ; SAND-94-0448C)

ROLE OF BURN-IN DURING QUALIFICATION TESTING (SAND ; SAND-94-0448C)
Paper図書
SHANEYFELT, M.R.// FLEETWOOD, D.M.// SCHWANK, J.R.// MEISENHEIMER, T.L.// WINOKUR, P.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1994.
Other Libraries in Japan
  • Author HeadingSHANEYFELT, M.R. FLEETWOOD, D.M. SCHWANK, J.R. MEISENHEIMER, T.L. WINOKUR, P...

SEU AND SEL RESPONSE OF THE WESTINGHOUSE 64K E/SUP 2/PROM, ANALOG DEVICES AD7876 12-BIT ADC, AND THE INTEL 82527 SERIAL COMMUNICATIONS CONTROLLER (SAND ; SAND-94-0449C)

SEU AND SEL RESPONSE OF THE WESTINGHOUSE 64K E/SUP 2/PROM, ANALOG DEVICES AD7876 12-BIT ADC, AND THE INTEL 82527 SERIAL COMMUNICATIONS CONTROLLER (SAND ; SAND-94-0449C)
Paper図書
SEXTON, F.W.// HASH, G.L.// CONNORS, M.P.// MURRAY, J.R.// SCHWANK, J.R.// WINOKUR, P.S.// BRADLEY, E.G. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1994.
Other Libraries in Japan
  • Author HeadingSEXTON, F.W. HASH, G.L. CONNORS, M.P. MURRAY, J.R. SCHWANK, J.R. WINOKUR, P.S. BRADLEY, E.G.

DISCREPANCIES BETWEEN CHARGE-PUMPING, DUAL-TRANSISTOR, AND MIDGAP MEASUREMENTS OF D/SUB IT/ (SAND ; SAND-92-1919C)

DISCREPANCIES BETWEEN CHARGE-PUMPING, DUAL-TRANSISTOR, AND MIDGAP MEASUREMENTS OF D/SUB IT/ (SAND ; SAND-92-1919C)
Paper図書
SCHWANK, J.R.// FLEETWOOD, D.M.// SHANEYFELT, M.R. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1992.
Other Libraries in Japan
  • Author HeadingSCHWANK, J.R. FLEETWOOD, D.M. SHANEYFELT, M...

EFFECT OF OXIDE THICKNESS ON INTERFACE-TRAP BUILDUP RATES (SAND ; SAND-92-1920C)

EFFECT OF OXIDE THICKNESS ON INTERFACE-TRAP BUILDUP RATES (SAND ; SAND-92-1920C)
Paper図書
SHANEYFELT, M.R.// SCHWANK, J.R.// FLEETWOOD, D.M.// WINOKUR, P.S. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1992.
Other Libraries in Japan
  • Author HeadingSHANEYFELT, M.R. SCHWANK, J.R. FLEETWOOD, D.M. WINOKUR, P.S.

PROTON IRRADIATION EFFECTS ON ADVANCED DIGITAL AND MICROWAVE III-V COMPONENTS (SAND ; SAND-94-0205C)

PROTON IRRADIATION EFFECTS ON ADVANCED DIGITAL AND MICROWAVE III-V COMPONENTS (SAND ; SAND-94-0205C)
Paper図書
HASH, G.L.// SCHWANK, J.R.// SHANEYFELT, M.R.// SANDOVAL, C.E.// CONNORS, M.P.// SHERIDAN, T.J.// SEXTON, F.W.// SLAYTON, E.M.// HEISE, J.A.// FOSTER, C. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED STATES))Sandia National Laboratories(Sandia National Laboratories)1994.
Other Libraries in Japan
  • Author HeadingHASH, G.L. SCHWANK, J.R. SHANEYFELT, M.R. SANDOVAL, C....

ASPECTS OF FATIGUE AND RAPID DEPOLARIZATION IN THE FILM PZT CAPACITORS (SAND ; SAND-91-0237C)

ASPECTS OF FATIGUE AND RAPID DEPOLARIZATION IN THE FILM PZT CAPACITORS (SAND ; SAND-91-0237C)
Paper図書
NASBY, R.D.// SCHWANK, J.R.// RODGERS, M.S.// MILLER, S.L. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (UNITED SATES))Sandia National Laboratories(Sandia National Laboratories)1991.
Other Libraries in Japan
  • Author HeadingNASBY, R.D. SCHWANK, J.R. RODGERS, M.S. MILLER, S.L.

COMPARISON OF LOW-ENERGY X-RAY AND COBALT-60 IRRADIATIONS OF MOS DEVICES AS A FUNCTION OF GATE BIAS (SAND ; SAND-91-0448C)

COMPARISON OF LOW-ENERGY X-RAY AND COBALT-60 IRRADIATIONS OF MOS DEVICES AS A FUNCTION OF GATE BIAS (SAND ; SAND-91-0448C)
Paper図書
SHANEYFELT, M.R.// FLEETWOOD, D.M.// SCHWANK, J.R.// HUGHES, K.L. (SANDIA NATIONAL LABS., ALBUQUERQUE, NM (USA))Sandia National Laboratories(Sandia National Laboratories)1991.
Other Libraries in Japan
  • Author HeadingSHANEYFELT, M.R. FLEETWOOD, D.M. SCHWANK, J.R. HUGHES, K.L.

Latent interface-trap buildup: Issues for long-term device response (SAND ; SAND-92-0357C) (CONF ; CONF-920716-1)

Latent interface-trap buildup: Issues for long-term device response (SAND ; SAND-92-0357C) (CONF ; CONF-920716-1)
Paper図書
J.R. Schwank [et al.]1992
Other Libraries in Japan
  • Author HeadingSchwank, J.R. Fleetwood, D.M. Shaneyfelt, M...
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