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MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications. Final rept. 15 Sep 1995-15 Oct 1999 AD-A386790 ARO348361EL

MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications. Final rept. 15 Sep 1995-15 Oct 1999 AD-A386790 ARO348361EL
Microform規格・テクニカルリポート類
Schetzina, J. F2001<LS-AD-A386790>
National Diet Library

Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.

Materials for infrared detectors and sources : symposium held December 1-5, 1986, Boston, Massachusetts, U.S.A.
Paper図書
editors, R.F.C. Farrow, J.F. Schetzina, J.T. CheungMaterials Research Societyc1987
Other Libraries in Japan
  • Author HeadingFarrow, R. F. C. Schetzina, J. F. Cheung, J. T. Materials Resea...

Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A.

Properties of II-VI semiconductors : bulk crystals, epitaxial films, quantum well structures, and dilute magnetic systems : symposium held November 27-December 2, 1989, Boston, Massachusetts, U.S.A.
Paper図書
editors, F.J. Bartoli, Jr., H.F. Schaake, J.F. SchetzinaMaterials Research Societyc1990
Other Libraries in Japan
  • Author Heading.... F. (Herb F.) Schetzina, J. F. (Jan F.) Materials Research S...

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