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Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering
Analysis of compositional fraction in polycrystalline In(x)Ga(1-x)As using Raman scattering
Digital
文書・図像類
Verma, P., 山田, 正良, 龍見, 雅美, 加藤, 浩和, 木下, 恭一, Yamada, Masayoshi, Tatsumi, Masami, Kato, Hirokazu, Kinoshita, Kyoichi
宇宙開発事業団
2000-09-29
NASDA Technical Memorandum
p.77-81
Other Libraries in Japan
Subject Heading
... 多結晶 基板 可変格子適合
エピタキシャル成長層
光電素子 基板結晶 出発材料 ラマン散乱 非破壊法 空間的...
Note (General)
...とした光電素子に対して、基板と
エピタキシャル成長層
の間の格子を可変的に整合させることを可能にする。しかし、組成...
Reached to the end of result.
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