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Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor under microgravity conditions

Numerical analysis of crystal growth of an InAs-GaAs binary semiconductor under microgravity conditions
Digital文書・図像類
平岡, 良章, 池上, 圭介, 前川, 透, 松本, 聡, Hiraoka, Yoshiaki, Ikegami, Keisuke, Maekawa, Toru, Matsumoto, Satoshi宇宙開発事業団2000-09-29NASDA Technical Memorandump.29-41
Other Libraries in Japan
  • Subject HeadingInAs-GaAs バイナリ半導体 微小重力 結晶成長法 2元結晶 溶液結晶界面 境界フィット...
  • Note (General)...計算方法をInAs-GaAs バイナリ半導体の結晶成長に応用し、微小重力下で引き起こされる浮力対流が結晶...
  • Alternative Title微小重力条件でのInAs-GaAsバイナリ半導体の結晶成長の数値解析

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Digital文書・図像類
宇宙開発事業団, Natl. Space Development Agency of Japan宇宙開発事業団2000-09-29NASDA Technical Memorandump.1-86
Other Libraries in Japan
  • Subject Heading...混合結晶 InAs-GaAs バイナリ半導体 gジッタ single crystal micrograv...

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