Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Material type: 文書・図像類

Author: 宇宙開発事業団ほか

Publisher: 宇宙開発事業団

Publication date: 2000-09-29

Material Format: Digital

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Note (General)：: 以下の主題について議論した。グレーデッド溶質濃縮法による均質なIn(0.3)Ga(0.7)As結晶の成長、濃度勾配部分溶融法とそのIn(x)Ga(1-x)Asへの応用、微小重力条件での2成分系半導体の結晶成長、InAs-GaAs相互拡散の測定、レーザフラッシュ法による溶融InGaAsの熱拡散率、In...

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Material Type: 文書・図像類
Title: Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Author/Editor: 宇宙開発事業団
Natl. Space Development Agency of Japan
Author Heading: 宇宙開発事業団
Natl. Space Development Agency of Japan
Publication, Distribution, etc.: 宇宙開発事業団
Publication Date: 2000-09-29
Publication Date (W3CDTF): 2000-09-29
Alternative Title: 宇宙開発事業団(NASDA)宇宙利用研究計画1999半導体チーム年次報告:一様結晶の半導体合金(InGaAs)成長の成長関連特性に対する微小重力環境の影響
Periodical title: NASDA Technical Memorandum
Pages: 1-86
ISSN (Periodical Title): ISSN : 1345-7888
Text Language Code: eng
Subject Heading: In(0.3)Ga(0.7)As
単結晶
微小重力
グレーデッド溶質濃縮法
部分溶融法
濃度勾配部分溶融法
スペースシャトル
国際宇宙ステーション
In(x)Ga(1-x)As
固液反応
多成分ゾーン溶融法
混合結晶
InAs-GaAs
バイナリ半導体
gジッタ
single crystal
microgravity
graded solute concentration method
partial melting method
concentration gradient partial melting method
Space Shuttle
International Space Station
In(x)Ga(1 minus x)As
solid liquid reaction
multi component zone melting method
mixed crystal
InAs GaAs
binary semiconductor
g jitter
Target Audience: 一般
Note (General): 以下の主題について議論した。グレーデッド溶質濃縮法による均質なIn(0.3)Ga(0.7)As結晶の成長、濃度勾配部分溶融法とそのIn(x)Ga(1-x)Asへの応用、微小重力条件での2成分系半導体の結晶成長、InAs-GaAs相互拡散の測定、レーザフラッシュ法による溶融InGaAsの熱拡散率、InAs濃度勾配のあるInGaAs出発物質、多成分ゾーン溶融法によるIn(0.3)Ga(0.7)As種結晶の準備、数値解析の信頼性試験、ラマン散乱を使ったIn(x)Ga(1-x)As多結晶の解析など。
The following topics were discussed: homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method, concentration gradient partial melting method and application to In(x)Ga(1-x)As, crystal growth of an InAs-GaAs binary semiconductor under microgravity condition, InAs-GaAs interdiffusion measurements, thermal diffusivity of molten InGaAs by the laser flash method, InGaAs starting materials having the gradient InAs concentration, In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method, reliability investigation on numerical analysis, analysis of polycrystalline In(x)Ga(1-x)As using Raman scattering, etc.
資料番号: AA0029300000
レポート番号: NASDA-TMR-000007E
Access Restrictions: 限定公開
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 宇宙航空研究開発機構 : 宇宙航空研究開発機構リポジトリ