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Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

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Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Material type
文書・図像類
Author
宇宙開発事業団ほか
Publisher
宇宙開発事業団
Publication date
2000-09-29
Material Format
Digital
Capacity, size, etc.
-
NDC
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Note (General)：

以下の主題について議論した。グレーデッド溶質濃縮法による均質なIn(0.3)Ga(0.7)As結晶の成長、濃度勾配部分溶融法とそのIn(x)Ga(1-x)Asへの応用、微小重力条件での2成分系半導体の結晶成長、InAs-GaAs相互拡散の測定、レーザフラッシュ法による溶融InGaAsの熱拡散率、In...

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Digital

Material Type
文書・図像類
Title
Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Author/Editor
宇宙開発事業団
Natl. Space Development Agency of Japan
Author Heading
宇宙開発事業団
Natl. Space Development Agency of Japan
Publication, Distribution, etc.
宇宙開発事業団
Publication Date
2000-09-29
Publication Date (W3CDTF)
2000-09-29
Alternative Title
宇宙開発事業団(NASDA)宇宙利用研究計画1999半導体チーム年次報告:一様結晶の半導体合金(InGaAs)成長の成長関連特性に対する微小重力環境の影響
Periodical title
NASDA Technical Memorandum
Pages
1-86