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Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As

Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As
Digital文書・図像類
中村, 裕彦, 加藤, 浩和, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Kato, Hirokazu, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.15-28
Other Libraries in Japan
  • Subject Heading...In(x)Ga(1-x)As 固液反応 熱力学 微小重力 多成分ゾーン溶融法 混合結晶 定量的推定...
  • Note (General)濃度勾配部分溶解(CGPM)法で起こると期待される固液反応を熱力学に基づいて定性的に調べた。得られた知見を元に、CGP...

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Digital文書・図像類
宇宙開発事業団, Natl. Space Development Agency of Japan宇宙開発事業団2000-09-29NASDA Technical Memorandump.1-86
Other Libraries in Japan
  • Subject Heading...In(x)Ga(1-x)As 固液反応 多成分ゾーン溶融法 混合結晶 InAs-GaAs バイナリ...

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