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Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)

Growth temperature dependent critical thickness for phase separation in thick (1 um) InxGa1-xN (x=0.2?0.4)
Digital文書・図像類
Yamamoto, A., Hasan, Md Tanvir, Kodama, K., Shigekawa, N., Kuzuhara, M.ELSEVIER SCIENCE BV2015-06Journal of Crystal Growth419p.64-68
Other Libraries in Japan
  • Subject HeadingA1. Phase separation A3. Metalorganic vapor phase epitaxy B2.Nitrides

Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg

Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg
Digital文書・図像類
YAMAMOTO, A, NAGAI, Y, NIWA, H, MIWA, H, HASHIMOTO, AElsevier2007-01Journal of crystal growth298p.399-402
Other Libraries in Japan
  • Subject HeadingA1. Doping A3. Metalorganic vapor phase epitaxy B1. Nitrides B2. Semiconducto...

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