Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg

Material type: 文書・図像類

Author: YAMAMOTO, Aほか

Publisher: Elsevier

Publication date: 2007-01

Material Format: Digital

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Note (General)：: The first trial of Mg doping in the atmospheric-pressure MOVPE growth of InN has been made using CP_2Mg as a Mg source. Although Mg is incorporated in...

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Material Type: 文書・図像類
Title: Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg
Author/Editor: YAMAMOTO, A
NAGAI, Y
NIWA, H
MIWA, H
HASHIMOTO, A
Author Heading: YAMAMOTO, A
NAGAI, Y
NIWA, H
MIWA, H
HASHIMOTO, A
Publication, Distribution, etc.: Elsevier
Publication Date: 2007-01
Publication Date (W3CDTF): 2007-01
Periodical title: Journal of crystal growth
No. or year of volume/issue: 298
Volume: 298
Pages: 399-402
Text Language Code: eng
Subject Heading: A1. Doping
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconductor nitride compounds
Target Audience: 一般
Note (General): The first trial of Mg doping in the atmospheric-pressure MOVPE growth of InN has been made using CP_2Mg as a Mg source. Although Mg is incorporated in the InN films and its content is proportional to CP_2Mg/TMI molar ratio, all samples grown here show n-type conduction and the electron concentration is rather increased with increasing CP2Mg/TMI molar ratio. The SIMS analysis reveals that C and H are also incorporated into the grown films. The AFM observation shows that the grain growth of InN is suppressed by the CP_2Mg supply. Both the contamination of C and H and the effect of the CP_2Mg supply to the grain growth are considerably reduced by selecting the substrate position on the susceptor.
Access Restrictions: 限定公開
Related Material (DOI): 10.108
Data Provider (Database): 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）
https://irdb.nii.ac.jp
Original Data Provider (Database): 福井大学 : 福井大学学術機関リポジトリ