Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg

• 資料種別: 文書・図像類
• タイトル: Electrical and optical properties of MOVPE InN doped with Mg using CP2Mg
• 著者・編者: YAMAMOTO, A; NAGAI, Y; NIWA, H; MIWA, H; HASHIMOTO, A
• 著者標目: YAMAMOTO, A; NAGAI, Y; NIWA, H; MIWA, H; HASHIMOTO, A
• 出版事項: Elsevier
• 出版年月日等: 2007-01
• 出版年（W3CDTF）: 2007-01
• タイトル（掲載誌）: Journal of crystal growth
• 巻号年月日等（掲載誌）: 298
• 掲載巻: 298
• 掲載ページ: 399-402
• 本文の言語コード: eng
• 件名標目: A1. Doping; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconductor nitride compounds
• 対象利用者: 一般
• 一般注記: The first trial of Mg doping in the atmospheric-pressure MOVPE growth of InN has been made using CP_2Mg as a Mg source. Although Mg is incorporated in the InN films and its content is proportional to CP_2Mg/TMI molar ratio, all samples grown here show n-type conduction and the electron concentration is rather increased with increasing CP2Mg/TMI molar ratio. The SIMS analysis reveals that C and H are also incorporated into the grown films. The AFM observation shows that the grain growth of InN is suppressed by the CP_2Mg supply. Both the contamination of C and H and the effect of the CP_2Mg supply to the grain growth are considerably reduced by selecting the substrate position on the susceptor.
• 一次資料へのリンクURL: https://u-fukui.repo.nii.ac.jp/?action=repository_action_common_download&item_id=22187&item_no=1&attribute_id=22&file_no=1
• オンライン閲覧公開範囲: 限定公開
• 関連情報（DOI）: 10.108
• 連携機関・データベース: 国立情報学研究所 : 学術機関リポジトリデータベース（IRDB）（機関リポジトリ）; https://irdb.nii.ac.jp
• 提供元機関・データベース: 福井大学 : 福井大学学術機関リポジトリ