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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method

In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
Digital文書・図像類
児玉, 茂夫, 古村, 雄二, 木下, 恭一, 加藤, 浩和, 依田, 真一, Kodama, Shigeo, Furumura, Yuji, Kinoshita, Kyoichi, Kato, Hirokazu, Yoda, Shinichi宇宙開発事業団1999-09-30宇宙開発事業団技術報告 = NASDA Technical Memorandump.57-60
Other Libraries in Japan
  • Subject Heading...owth interface growth temperature traveling rate homogenious co...
  • Note (General)...decreasing the growth temperature, as in the vertical gradient ...

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