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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method

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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method

Material type
文書・図像類
Author
児玉, 茂夫ほか
Publisher
宇宙開発事業団
Publication date
1999-09-30
Material Format
Digital
Capacity, size, etc.
-
NDC
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Notes on use

Note (General)：

最近、多成分域溶融法を用いたIn(0.3)Ga(0.7)As種結晶の調整を、宇宙実験用として進めている。これまでに、28mm長さの単結晶In(x)Ga(1-x)Asの3元バルク結晶をGaAs種結晶の上に成長させてきた。垂直勾配冷凍法におけるのと同様に、成長する結晶のInAs組成は、初期成長界面におい...

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Digital

Material Type
文書・図像類
Title
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
Author/Editor
児玉, 茂夫
古村, 雄二
木下, 恭一
加藤, 浩和
依田, 真一
Kodama, Shigeo
Furumura, Yuji
Kinoshita, Kyoichi
Kato, Hirokazu
Yoda, Shinichi
Author Heading
児玉, 茂夫
古村, 雄二
木下, 恭一
加藤, 浩和
依田, 真一
Kodama, Shigeo
Furumura, Yuji
Kinoshita, Kyoichi
Kato, Hirokazu
Yoda, Shinichi
Publication, Distribution, etc.
宇宙開発事業団
Publication Date
1999-09-30
Publication Date (W3CDTF)
1999-09-30
Alternative Title
Multi-componentゾーンメルティング法によるIn(0.3)Ga(0.7)As種結晶の育成
Periodical title
宇宙開発事業団技術報告 = NASDA Technical Memorandum
Pages
57-60