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In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
In(0.3)Ga(0.7)As seed crystal preparation using the multi-component zone melting method
Digital
文書・図像類
児玉, 茂夫, 古村, 雄二, 木下, 恭一, 加藤, 浩和, 依田, 真一, Kodama, Shigeo, Furumura, Yuji, Kinoshita, Kyoichi, Kato, Hirokazu, Yoda, Shinichi
宇宙開発事業団
1999-09-30
宇宙開発事業団技術報告 = NASDA Technical Memorandum
p.57-60
Other Libraries in Japan
Subject Heading
...溶融 MCZM 垂直勾配冷凍
InAs組成
成長界面 成長温度 移動速度 均質組成 In(0.3)Ga...
Note (General)
...けるのと同様に、成長する結晶の
InAs組成
は、初期成長界面において0.0...
...動かすことによって、この部分の
InAs組成
を0.34±0.1に維持することができた。宇宙実験のための種...
Reached to the end of result.
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