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浮遊帯域溶融法による化合物半導体InSb単結晶の育成

浮遊帯域溶融法による化合物半導体InSb単結晶の育成
Digital文書・図像類
中谷, 功, 高橋, 總, 小澤, 清, 西田, 勲夫, Nakatani, Isao, Takahashi, Satoshi, Ozawa, Kiyoshi, Nishida, Isao宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.499-506
Other Libraries in Japan
  • Subject Heading... semiconductor InSb single crystal crystal growth microgravity e...
  • Note (General)...m in length of InSb single crystal. This is first......ion density of InSb single crystal as seed crystal produced on g...

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