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狭バンドギャップ3元混晶半導体鉛錫テルル単結晶の無重力下における結晶成長

狭バンドギャップ3元混晶半導体鉛錫テルル単結晶の無重力下における結晶成長
Digital文書・図像類
山田, 智秋, 木下, 恭一, Yamada, Tomoaki, Kinoshita, Kyoichi宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.431-467
Other Libraries in Japan
  • Subject Heading... semiconductor PbSnTe single crystal microgravity environment crys...
  • Alternative TitleCrystal growth of narrow band gap ternary mixed semiconductor PbSnTe single crystal in space
  • Alternative TitleCrystal growth of narrow band gap ternary mixed semiconductor PbSnTe single crystal in space

微小重力下における帯溶融法によるPbSnTe単結晶の試作

微小重力下における帯溶融法によるPbSnTe単結晶の試作
Digital文書・図像類
岩井, 荘八, 瀬川, 勇三郎, Iwai, Sohachi, Segawa, Yusaburo宇宙開発事業団1994-10-20宇宙開発事業団技術報告 = NASDA Technical Memorandump.468-498
Other Libraries in Japan
  • Subject Heading...ng zone method PbSnTe single crystal crystal growth infrared heati...
  • Note (General)...n low gravity, PbSnTe single crystal was grown on s......m in length of PbSnTe single crystal was obtained by four hours of...
  • Alternative TitleGrowth of PbSnTe single crystal by travelling-zone method in ...

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