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Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications
Digital文書・図像類
Kuzuhara, Masaaki, Tokuda, HirokuniIEEE.2015-02IEEE Transactions on Electron Devices62 2p.405-413
Other Libraries in Japan
  • Subject HeadingGaN HEMT breakdown voltage current collapse field plate
  • Note (General)...e, suppressing current collapse, and reducing ......es to suppress current collapse indicated that surface trappi...

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.

Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs Md.
Digital文書・図像類
Hasan, Md. Tanvir, Asano, Takashi, Tokuda, Hirokuni, Kuzuhara, MasaakiInstitute of Electrical and Electronics Engineers2013-11IEEE Electrpm Device Letters34 11p.1379-1381
Other Libraries in Japan
  • Subject Heading...sistors (HEMT) current collapse, field plate (FP) ON-resistan...
  • Note (General)Current collapse measurements h......or the reduced current collapse by FP is proposed, in which t...

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