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Search results 13

Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures [microform] / O.Y. Raisky ... [et al.] ([NASA contractor report] ; NASA-CR-204611)

Temperature dependence of photoluminescence in InGaAsP/InP strained MQW heterostructures [microform] / O.Y. Raisky ... [et al.] ([NASA contractor report] ; NASA-CR-204611)
Microform図書
1996<YCA-NAS 1.26:204611>
National Diet Library
  • Subject HeadingIndium gallium arsenides Indium phosphides Quantum we...

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort [microform] : under contract NAS3-96060 / Yabo Li ... [et al.] (NASA contractor report ; 204146)

InGaAsSb/GaSb thermophotovoltaic cells, phase I effort [microform] : under contract NAS3-96060 / Yabo Li ... [et al.] (NASA contractor report ; 204146)
Microform図書
1997<YCA-NAS 1.26:204146>
National Diet Library
  • Subject HeadingGallium antimonides Indium gallium arsenides Photovoltaic cells Exothermi...

Development of advanced laser diode sources [microform] : final report, NASA NAG 1-1861 / J.J. Coleman and G.C. Papen ([NASA contractor report] ; NASA/CR-1998-206998)

Development of advanced laser diode sources [microform] : final report, NASA NAG 1-1861 / J.J. Coleman and G.C. Papen ([NASA contractor report] ; NASA/CR-1998-206998)
Microform図書
1998<YCA-NAS 1.26:206998>
National Diet Library
  • Subject Heading...nides Cladding Indium gallium arsenides Waveguide lasers Remote sens...

Electrical and optical performance characteristics of p/n InGaAs monolithic interconnected modules [microform] / David M. Wilt ... [et al.] (NASA technical memorandum ; 113110)

Electrical and optical performance characteristics of p/n InGaAs monolithic interconnected modules [microform] / David M. Wilt ... [et al.] (NASA technical memorandum ; 113110)
Microform図書
1997<YCA-NAS 1.15:113110>
National Diet Library
  • Subject Heading...cal properties Indium gallium arsenides Modules P-n junctions Produc...

Electrical and optical performance characteristics of 0.74-eV p/n InGaAs monolithic interconnected modules [microform] / David M. Wilt ... [et al.] (NASA technical memorandum ; 113122)

Electrical and optical performance characteristics of 0.74-eV p/n InGaAs monolithic interconnected modules [microform] / David M. Wilt ... [et al.] (NASA technical memorandum ; 113122)
Microform図書
1997<YCA-NAS 1.15:113122>
National Diet Library
  • Subject HeadingThermophotovoltaic conversion Indium gallium arsenides System effectiveness Reflect...

Ka-band GaAs FET monolithic power amplifier development [microform] : [contract no. NAS3-24239] / Paul Saunier and Hua Quen Tserng (NASA contractor report ; 202348)

Ka-band GaAs FET monolithic power amplifier development [microform] : [contract no. NAS3-24239] / Paul Saunier and Hua Quen Tserng (NASA contractor report ; 202348)
Microform図書
1997<YCA-NAS 1.26:202348>
National Diet Library
  • Subject Heading...rated circuits Indium gallium arsenides

CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode [microform] / R.D. Martin ... [et al.] ([NASA contractor report] ; NASA-CR-200347)

CW performance of an InGaAs-GaAs-AlGaAs laterally-coupled distributed feedback (LC-DFB) ridge laser diode [microform] / R.D. Martin ... [et al.] ([NASA contractor report] ; NASA-CR-200347)
Microform図書
1995<YCA-NAS 1.26:200347>
National Diet Library
  • Subject HeadingIndium gallium arsenides Quantum efficiency Gallium a...

Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates

Scale up of In(x)Ga(1-x)As (x: 0.08-0.13) platy crystals for semiconductor laser substrates
Digital文書・図像類
木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Yoda, Shinichi宇宙航空研究開発機構2008-02-29宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-07-015E
Other Libraries in Japan
  • Subject Heading... スケールアップ 改良 対流 indium gallium arsenide single crystal crystal growth...

High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates

High quality In(x)Ga(1-x)As (x: 0.1-0.13) platy crystal growth for semiconductor laser substrates
Digital文書・図像類
木下, 恭一, 植田, 稔晃, 足立, 聡, 荒井, 康智, 宮田, 浩旭, 田中, 涼太, 村松, 祐治, 依田, 眞一, Kinoshita, Kyoichi, Ueda, Toshiaki, Adachi, Satoshi, Arai, Yasutomo, Miyata, Hiroaki, Tanaka, Ryota, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2007-03-30宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-06-014E
Other Libraries in Japan
  • Subject Heading...hod TLZ method indium gallium arsenide crystal growth temperature gr...

Modeling and experimental study on the traveling liquidus-zone method

Modeling and experimental study on the traveling liquidus-zone method
Digital文書・図像類
木下, 恭一, 中村, 裕彦, 花上, 康宏, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 足立, 聡, 越川, 尚清, 依田, 真一, Kinoshita, Kyoichi, Nakamura, Hirohiko, Hanaue, Yasuhiro, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Adachi, Satoshi, Koshikawa, Naokiyo, Yoda, Shinichi宇宙開発事業団2002-12-27宇宙開発事業団技術報告: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs)-Growth of Homogeneous Crystals = NASDA Technical Memorandum: Annual Report of the Semiconductor Team in NASDA Space Utilization Research Program (2001): Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (I[lc]nG[lc]aA[lc]s)-Growth of Homogeneous Crystalsp.11-18
Other Libraries in Japan
  • Subject Heading...uctor material indium gallium arsenide

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method

In(0.3)Ga(0.7)As plate crystals grown by the Traveling Liquidus-Zone (TLZ) method
Digital文書・図像類
木下, 恭一, 緒方, 康行, 足立, 聡, 越川, 尚清, 鶴, 哲也, 宮田, 浩旭, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Ogata, Yasuyuki, Adachi, Satoshi, Koshikawa, Naokiyo, Tsuru, Tetsuya, Miyata, Hiroaki, Muramatsu, Yuji, Yoda, Shinichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.14-20
Other Libraries in Japan
  • Subject Heading...on laser diode indium gallium arsenide convection growth model plate...

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method

Estimation of diffusion coefficient by using numerical simulation of the Traveling Liquidus-Zone method
Digital文書・図像類
足立, 聡, 緒方, 康行, 松本, 聡, 越川, 尚清, 高柳, 昌弘, 依田, 真一, 木下, 恭一, Adachi, Satoshi, Ogata, Yasuyuki, Matsumoto, Satoshi, Koshikawa, Naokiyo, Takayanagi, Masahiro, Yoda, Shinichi, Kinoshita, Kyoichi宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development Report: Effects of Microgravity Environment on Growth Related Properties of Semiconductor Alloys (InGaAs): Growth of Homogeneous CrystalsJAXA-RR-04-022Ep.28-32
Other Libraries in Japan
  • Subject Heading...l conductivity indium gallium arsenide

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals

Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs): Growth of homogeneous crystals
Digital文書・図像類
宇宙航空研究開発機構, Japan Aerospace Exploration Agency宇宙航空研究開発機構2005-03-31宇宙航空研究開発機構研究開発報告 = JAXA Research and Development ReportJAXA-RR-04-022E
Other Libraries in Japan
  • Subject Heading... Si-Ge crystal indium gallium arsenide crystal growth model temperat...

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