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Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method

Homogeneous In(0.3)Ga(0.7)As crystal growth by the graded solute concentration method
Digital文書・図像類
木下, 恭一, 加藤, 浩和, 松本, 聡, 岩井, 正行, 鶴, 哲也, 村松, 祐治, 依田, 真一, Kinoshita, Kyoichi, Kato, Hirokazu, Matsumoto, Satoshi, Iwai, Masayuki, Tsuru, Tetsuya, Muramatsu, Yuji, Yoda, Shinichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.11-14
Other Libraries in Japan
  • Subject Heading...tration method partial melting method concentration gradient partial melting method Space Shuttle International S...
  • Note (General)...ng the idea of partial melting method and named 'the......ation gradient partial melting method.' In the Space Shuttle or in ...

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals

Annual report of the semiconductor team in NASDA Space Utilization Research Program 1999: Effects of microgravity environment on growth related properties of semiconductor alloys (InGaAs)-growth of homogeneous crystals
Digital文書・図像類
宇宙開発事業団, Natl. Space Development Agency of Japan宇宙開発事業団2000-09-29NASDA Technical Memorandump.1-86
Other Libraries in Japan
  • Subject Heading...tration method partial melting method concentration gradient partial melting method Space Shuttle International S...
  • Note (General)...ation gradient partial melting method and application to In(x)Ga(1-...

Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As

Qualitative description of the concentration gradient partial melting method and application to In(x)Ga(1-x)As
Digital文書・図像類
中村, 裕彦, 加藤, 浩和, 木下, 恭一, 依田, 真一, Nakamura, Hirohiko, Kato, Hirokazu, Kinoshita, Kyoichi, Yoda, Shinichi宇宙開発事業団2000-09-29NASDA Technical Memorandump.15-28
Other Libraries in Japan
  • Subject Heading...ation gradient partial melting method CGPM method In(x)Ga(1 minus x...

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