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Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―

Tree-Like Features Formed on Photoelectrochemically etched n-GaN surfaces ―Revelation of threading dislocations in GaN―
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YAMAMOTO, Akio, AZUMA, Katsuhiko, YASUDA, Tomomi, HASHIMOTO, AkihiroThe Institute of Pure and Applied Physics2000-11-30Proceedings of International Workshop on Nitride Semiconductorsp.778-781
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  • Subject HeadingGaN photoelectrochemical etching detection of dislocations cur...
  • Note (General)... the cases for photoelectrochemical etching of n-type GaAs......lms. Thus, the photoelectrochemical etching is found to become a convenie...

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